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X-ray optical properties of C/C-multilayers prepared by pulsed laser deposition -PLD-

Vortrag in Symposium G.
Röntgenoptische Eigenschaften von C/C-Multischichten, die mittels PLD hergestellt wurden
 

Nguyen, T.D. ; Materials Research Society -MRS-:
Structure and Properties of Multilayered Thin Films : Symposium held April 17 - 20, 1995, San Francisco, California, U.S.A.
Warrendale, Pa.: MRS, 1995 (Materials Research Society symposia proceedings 382)
ISBN: 1-558-99285-5
6 S. : Abb.,Lit.
Materials Research Society (Spring Meeting) <1995, San Francisco/Calif.>
Symposium "Structure and Properties of Multilayered Thin Films" <1995, San Francisco/Calif.>
Englisch
Konferenzbeitrag
Fraunhofer IWS ()
a-C film; amorphe C-Schicht; C/C-Multischicht; monochromator; multilayer; PLD; PLD-Laserablation; pulsed laser deposition; Röntgenspiegel; thermal stability; thermische Stabilität; X-ray mirror

Abstract
The mass density of thin a-C films prepared by PLD is determined by the parameters of the ablation process. This fact results from various concentrations of sp(exp3)and sp(exp2) bonded atoms in the films, that are created for different laser power densities. Thus more diamond-like or more graphite-like layers are obtained. The alternate deposition of layers with different mass densities enables the preparation of C/C-multilayers that show X-ray optical activity. In the present investigations C/C-multilayers were deposited on silicon substrates at room temperature under UHV-conditions. The double layer thickness d was changed in the range from 74 A through 18 A. High quality interfaces and very reproducible average d-spacing resulted in an energy resolution of 0.7 % for 120 period stacks. Due to chemically almost equivalent layers the chemical driving forces of atomic transport in these multilayers vanish. Thus e.g. thermal stability is observed up to 700 'C for an appropriate heat trea tment. The limiting factor of thermal stability is caused by SiC-formation from reactions between layer stack and silicon substrate. In-situ ellipsometry, grazing incidence X-ray diffraction, high resolution electron microscopy (HREM) and image processing were applied for specimen characterization.

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