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X-ray lithography

 
: Heuberger, A.

Microelectronic engineering (1986), Nr.5, S.3-38
ISSN: 0167-9317
International Conference on Microlithography <1986, Interlaken>
Englisch
Konferenzbeitrag
Fraunhofer ISIT ()

Abstract
X-ray lithography with wavelengths between 0.2 nm and 5 nm provides both high structural resolution as good as 0.1 micrometer and a wide scope of advantages for the application in circuit production. Examples for this better process performance compared to optical techniques are: lower particle and dust sensitivity, applicability of simple single-layer resist technique, high depth of focus without any influence of substrate material and chip topography and presumably the highest throughout of all lithography methods which are able to go into the submicron range.

: http://publica.fraunhofer.de/dokumente/PX-42204.html