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Voltage dependence of the optical response of a pseudomorphic HFET-photodetector

Spannungsabhängigkeit des optischen Frequenzgangs eines pseudomorphen HFET-Photodetektors
 

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24th European Microwave Conference '94. Proceedings
1994
S.1477-1482
European Microwave Conference (EuMC) <24, 1994, Cannes>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
HEMTs; optical microwave interaction; Optik-Mikrowellen-Wechselwirkung; photoconductive gain; photodetector; Photodetektor; photokonduktive Verstärkung

Abstract
A pseudomorphic HFET has been used as a photodetector. The optical respnse of such a device was measured in the frequency range from 100 kHz up to 10 GHz. The response of the HFET-photodetector showed a strong dependence on the applied drain-to-source bias voltage of the transistor. This behaviour is explained by an amplification of the primarily generated photocurrent by traps in the buffer layer of the transistor. The occupation time of these traps can strongly depend on the applied voltage

: http://publica.fraunhofer.de/dokumente/PX-40351.html