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Angular dispersion of raman intensities in silicon

 
: Lang, W.

12th International Conference on Raman Spectroscopy '90. Proceedings
Chichester: Wiley and Sons, 1990
ISBN: 0-471-92785-6
International Conference on Raman Spectroscopy <12, 1990, Columbia/S.C.>
Englisch
Konferenzbeitrag
Fraunhofer IFT; 2000 dem IZM eingegliedert
orientation; raman silicon anisotropy

Abstract
The Raman intensity of silicon is dependent on the crystal orientation of the probe. The angular dispersion is verified experimentally.

: http://publica.fraunhofer.de/dokumente/PX-3996.html