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A versatile ion implanter for material modification

: Kluge, A.; Öchsner, R.; Ryssel, H.

Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms 37/38 (1989), S.504-507
ISSN: 0168-583X
International Conference on Ion Implantation Technology <7, 1989, Kyoto>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IIS B ( IISB) ()
Industrieanwendung; Ionenimplantation; Oberflächenmodifikation; Tribologie; Werkzeugvergütung

Based on our experiences with an implanter for metal modification we designed and built a multi-purpose implanter for surface modification of polymers, ceramics, and metals. The target chamber has a volume of 2200 1. The vacuum system allows a total pressure less than 10 high minus 7 mbar. The energy of the implanter is 60 keV (extendable to 160 keV) with ion currents of 0,01 to 6 mA allowing for implantation doses between 10 high 12 to 10 high 18 cm high minus 2 depending on sample size. The beam is mass analyzed. The mass range for 50 keV ions is 1 to 180 amu. Since the source has an oven which can reach 1200 degrees C, many elements can be directly evaporated and ionizied without the need to use toxic gases. The maximum scan area is 75 x 75 cm high 2 and the maximum sample weight 50 kg. Cylindrical samples with a diameter less than 25 cm may have a length of several meters. Scanning of the samples is performed using a xy-table or a rotational fixture. Water-cooled target holders all ow low temperature, high dose implantations of temperature-sensitive targets. As an option, ion beam assisted deposition (IBAD) can be performed using a 8 kW electron gun.