Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Verfahren zum Herstellen eines ionensensitiven Feldeffekttransistors mit Rueckseitenkontakt

Process for the production of an ion-sensitive field effect transistor with a contact on its rear side
 
: Hein, P.; Ramm, P.

:
Frontpage ()

DE 1994-4430812 A: 19940830
DE 1994-4430812 A: 19940830
DE 4430812 C1: 19950907
H01L0021
Deutsch
Patent, Elektronische Publikation
Fraunhofer IZM ()

Abstract
The present invention discloses a process for the production of an ion-sensitive field effect transistor with a contact on its rear side, comprising the following steps: Structuring a source area, a drain area and an ion-sensitive gate area on a front side of a substrate; depositing a silicon dioxide/silicon nitrite double layer to act as a gate isolator; depositing a first silicon carbide layer on the front side of the substrate; structuring an isolation layer deposited on the rear side of the substrate in such a way that the contact hole areas are fixed opposite to the source area and the drain area; depositing and structuring a second silicon carbide layer on the rear side of the substrate; etching trenches which extend from the contact areas in the direction of the substrate front side; applying material which has the identical conductivity type as that of the source area and the drain area in the areas of the substrate which are adjacent to the trenches; depositing conductors on t he rear side of the substrate and in the trenches; and removal of the silicon carbide layer on the front side, at least in the ion-sensitive gate area.

: http://publica.fraunhofer.de/dokumente/PX-38864.html