Verfahren zum Erzeugen einer isolierten, einkristallinen Siliziuminsel
Date Issued
1994
Author(s)
Vogt, Holger
Patent No
1991-4127925
Abstract
In order to enhance the electrical and thermal insulation of a silicon island, a process is proposed for the following steps: oxygen implantation in a low- or medium-doped, single-crystal silicon area in order to generate a buried silicon dioxide layer, deposition of a silicon epitaxy layer, generation of a trench etching mask and definition of the trench by means of photolithography, etching of the trench, filling of the trench, generation of a back-surface mask by photolithography and etching of the silicon wafer rear through the local opening of the mask down to the buried silicon diode layer serving as an etch stop.