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Verfahren zum dauerhaften Verbinden von anorganischen Substraten

Process for connecting silicon wafers - by forming polyimide layer on one wafer and joining to other wafer by plasma-induced reaction.
 
: Klumpp, A.; Landesberger, C.

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Frontpage ()

DE 1996-19639682 A: 19960926
DE 1996-19639682 A: 19960926
EP 1997-910352 A: 19970924
DE 19639682 A1: 19980402
EP 931331 B1: 20020605
H01L0021
H01L0021
Deutsch
Patent, Elektronische Publikation
Fraunhofer IZM ()

Abstract
Process for connecting a 1st and a 2nd silicon wafer comprises (a) providing the 1st wafer with a polyimide layer on the main surface to be connected to the 2nd wafer, (b) producing a plasma-induced reaction between polyimide layer and water, (c1) producing a plasma-induced reaction between a main surface of the 2nd silicon wafer to be connected to the 1st wafer, and chlorine, or (c2) forming a SiO2 layer on the main surface of the 2nd silicon wafer to be connected to the 1st silicon wafer, and (d) connecting the two wafers by joining the two main surfaces. USE - Used in the production of integrated circuits. ADVANTAGE - The join has high tensile strength.

: http://publica.fraunhofer.de/dokumente/PX-38804.html