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Title
Verfahren zum Bilden von Justiermarken in einer Siliziumschicht
Date Issued
1998
Author(s)
Kalus, M.
Bollmann, D.
Klumpp, A.
Patent No
1996-19624316
Abstract
In a method of forming alignment marks in a silicon layer using a masking layer, the etchant consists of a mixture of monoethanolamine-dimethyl-sulphoxide and water, preferably 10-75 (especially 50) vol.% of a mixture of 60-80 (especially 70) vol.% monoethanolamine and 20-40 (especially 30) vol.% dimethyl-sulphoxide in water. USE - Especially in the manufacture of multi-level microelectronic components. ADVANTAGE - The etchant is compatible with the requirements of microelectronics, is alkali-free and has high selectivity wrt. SiO2, so that SiO2 can be used as masking material instead of materials such as SiC which are not usually used in CMOS technology.
Language
de
Patenprio
DE 1996-19624316 A: 19960618