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Ultrafast metal-semiconductor-metal photodiodes fabricated on low-temperature GaAs.

Ultraschnelle Metall-Halbleiter-Metall-Photodioden, hergestellt aus Niedertemperatur-GaAs


Applied Physics Letters 60 (1992), Nr.5, S.627-629 : Abb.,Tab.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()

GaAs metal-semiconductor-metal photodiodes fabricated on GaAs grown at low substrate temperatures (200 degree C) have been investigated in the time domain by electro-optic sampling. It could be shown that these diodes have a faster response, a considerably reduced long time tail, and can be used at larger bias than comparable diodes produced on GaAs grown at 700 degree C. Temperature-dependent measurements show that the tail can be described by hopping conductivity and disappears below 50 K.