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Ultra flat P-N junctions formed by solid source laser doping



Applied surface science 46 (1990), S.348-351
ISSN: 0169-4332
European Materials Research Society (Spring Meeting) <1990, Strasbourg>
Fraunhofer IFT; 2000 dem IZM eingegliedert
diffusion; doping; Dotierung; flach; flat; Halbleiter; laser; Oberfläche; p-n junction; p-n Übergang; pn-junction; pn-Übergang; semiconductor; shallow; silicate glass; silicon; Silizium; surface

A CO sub 2 high-power laser was used for laser-driven boron and phosphorus diffusion in solid phase from silicate glass layers into silicon. This technique allows the formation of shallow (< 0.1mym) and flat profile junctions with a concentration of about 10 high 19 cm high -3. SIMS, SEM and spreading resistance methods were used for sample characterization.