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Two-dimensional simulation of ion implantation profiles using a personal computer

Zweidimensionale Simulation von Implantationsprofilen auf einem PC
: Barthel, A.; Lorenz, J.; Ryssel, H.

Nuclear instruments and methods in physics research, Section B. Beam interactions with materials and atoms 37/38 (1989), S.312-316
ISSN: 0168-583X
International Conference on Ion Implantation Technology <7, 1989, Kyoto>
Zeitschriftenaufsatz, Konferenzbeitrag
Fraunhofer IIS B ( IISB) ()
Halbleitertechnologie; Ionenimplantation; Prozeßsimulation; Simulationsprogramm

A new sofware tool was developed which allows a simulation of two-dimensional ion implantation profiles using a personal computer within a few minutes of computing time. This program, COMPLAN, uses Pearson destributions for the description of vertical dopant distributions and an improved multilayer model for the simulation of the implantation through thin layers. A lateral convolution with a Gaussian profile yields good results for the lateral spread of the implanted ions. The influence of wafer tilting on the shape of two-dimensional implantation profiles can also be simulated. The implantation range parameters needed for B, Sb, P, and As used in COMPLAN are partly from experiments in order to take into consideration the channeling effect and partly from theoretical calculations. The user may also enter own values for the range parameters. A menu system allows for a very easy programm control. FORTRAN program language and a simple graphics interface make sure that the program is highl y portable to different computers. (AIS-B)