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Tunneling between two quantum wells - In0.35Ga0.47As/InP versus GaAs/Al0.35Ga0.65As.

Tunneln zwischen zwei Quantum Wells - Ein Vergleich von In0.53Ga0.47As/InP mit GaAs/Al0.35Ga0.65As
 
: Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Sauer, R.; Köhler, K.; Tsang, W.T.

Solid-State Electronics 32 (1989), Nr.12, S.1621-1625 : Abb.,Tab.,Lit.
ISSN: 0038-1101
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
coupled quantum wells; photoluminescence; quantum wells; resonant tunneling; time-resolved photoluminescence

Abstract
The electron transfer from a narrow to a wide quantum well through a thin barrier is studied in the non-resonant case by time-resolved photoluminescence. The two systems In0.53Ga0.47As/InP and GaAs/Al0.35Ga0.65As are compared. Space charge effects are investigated and discussed. Contributions of holes to the tunneling process are determined.

: http://publica.fraunhofer.de/dokumente/PX-37138.html