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Titanium monophosphide (TiP) layers as potential diffusion barriers

 
: Leutenecker, R.; Fröschle, B.; Ramm, P.

Societe Francaise du Vide -SFV-, Paris:
MAM '97. Abstracts booklet
Paris, 1997 (Le vide 283)
S.124 : Lit.
European Workshop on Materials for Advanced Metallization (MAM) <2, 1997, Villard de Lans>
Englisch
Konferenzbeitrag
Fraunhofer IFT; 2000 dem IZM eingegliedert
annealing; chemical vapour deposition; diffusion barriers; integrated circuit metallisation; integrated circuit testing; rapid thermal processing

Abstract
Summary form only given. Usually, diffusion barrier layers are fabricated of titanium nitride, deposited either by sputtering or by CVD. We developed a rapid thermal-CVD process with the classical precursor combination TiCl4/NH3 for temperatures