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Three-dimensional simulation of SiO2 profiles from TEOS-sourced remote microwave plasma-enhanced chemical vapor deposition

Dreidimensionale Simulation von SiO2-Profilen abgeschieden durch TEOS-basierte eingekoppelte-Mikrowellen-plasmagestützte chemische Gasphasenabscheidung
: Bär, E.; Lorenz, J.; Ryssel, H.

Touboul, A.; Danto, Y.; Klein, J.-P.; Grünbacher, H.:
Paris: Ed. Frontieres, 1998
ISBN: 2-86332-234-6
European Solid-State Device Research Conference (ESSDERC) <28, 1998, Bordeaux>
Fraunhofer IIS B ( IISB) ()
chemical vapor deposition; chemische Gasphasenabscheidung; Halbleitertechnologie; process simulation; Prozeßsimulation; Siliciumoxid

Replacing in part experimental investigations by performing computer simulations helps saving time and costs in semiconductor manufacturing.In this work, we conducted a model calibration for three-dimensional (3D) topography simulation by comparing step coverage data for trenches with 2D simulations. We considered the remote microwave plasma-enhanced chemical vapor deposition of SiO2 from tetraethoxysilane (TEOS). Using data from literature we found that asingle-sticking-coefficient model well describes the observed step coverage in trenches. Different values of the sticking coefficient correspond to different process conditions. Two sets of process conditions have been evaluated by means of 3D simulation in order to investigate the layer profile on L-shaped trench structures which require 3D treatment of the transport fluxes of reactive molecules. The study presented in this paper is an example for how to proceed when utilizing 3D simulations for evaluating the shape of layers deposited on 3D features