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Three-dimensional simulation of layer deposition

Dreidimensionale Simulation der Schichtabscheidung
: Bär, E.; Lorenz, J.; Ryssel, H.


Microelectronics journal 29 (1998), Nr.11, S.799-804
ISSN: 0026-2692
ISSN: 0959-8324
Fraunhofer IIS B ( IISB) ()
Halbleitertechnologie; layer deposition; process simulation; Prozeßsimulation; Schichtabscheidung; semiconductor technology

A program for the three-dimensional (3D) simulation of layer depositionhas been developed. It is based on physical models for the description ofthe specific processes, and uses a triangular surface representation. Thediscretized surface is shifted according to the growth rates calculatedfrom the model. Additional algorithms for deleting nearly degeneratedtriangles and for the adaptive refinement of the triangulation improvethe stability and efficiency of the simulator. We show simulations ofdifferent deposition processes, such as low-pressure chemical vapordeposition (LPCVD) of silicon dioxide and tungsten silicide, and sputterdeposition of aluminum and titanium nitride. The comparison between 2D and3D simulations shows the necessity to use 3D tools for the prediction ofthe shape of deposited layers, particularly for geometries such ashigh-aspect ratio contact holes. Experimental results for the depositionof silicon dioxide show good agreement with simulations.