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Three-dimensional simulation of ion implantation

Dreidimensionale Simulation der Ionenimplantation
 
: Tietzel, K.; Burenkov, A.; Lorenz, J.; Ryssel, H.

Silvester, P.P.:
Software for electrical engineering analysis and design
Southampton: Computational Mechanics Publ., 1996
ISBN: 1-85312-395-1
S.337
International Conference on Software for Electrical Engineering Analysis and Design <3, 1996, San Miniato>
Electrosoft <1996, San Miniato>
Englisch
Konferenzbeitrag
Fraunhofer IIS B ( IISB) ()
analytical method; analytische Methode; Halbleitertechnologie; ion implantation; Ionenimplantation; process simulation; Prozeßsimulation; semiconductor technology

Abstract
With shrinking dimensions and growing complexity of advanced ULSI devices three-dimensional effects are becoming more and more important for their development and optimization. For this reason, within the project PROMPT a multidimensional process simulation software capable to provide appropriate input to three-dimensional device simulation has been developed by a European consortium. The PROMPT software compiles the geometry and the dopant profiles of the device from the results of existing one- and two-dimensional process simulators and three-dimensional modules newly developed. Within this presentation, the capabilities of the three-dimensional ion implantation module developed at FhG-IIS-B within PROMPT are being outlined.

: http://publica.fraunhofer.de/dokumente/PX-36541.html