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Three-dimensional simulation of ion implantation

Dreidimensionale Simulation der Ionenimplantation
: Lorenz, J.; Tietzel, K.; Burenkov, A.; Ryssel, H.

IEEE Electron Devices Society; Japan Society of Applied Physics -JSAP-:
International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96
Tokyo: Business Center for Academic Societies Japan, 1996
ISBN: 0-7803-2745-4
ISBN: 0-7803-2746-2
S.23-24 : Ill., Lit.
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <1, 1996, Tokyo>
Fraunhofer IIS B ( IISB) ()
analytical method; analytische Methode; Halbleitertechnologie; ion implantation; Ionenimplantation; process simulation; Prozeßsimulation; semiconductor technology

With shrinking dimensions and growing complexity of advanced ULSI devices three-dimensional effects are becoming more and more important for their development and optimization. For this reason, within the project PROMPT a multidimensional process simulation software capable to provide appropriate input to three-dimensional device simulation has been developed by a European consortium. The PROMPT software compiles the geometry and the dopant profiles of the device from the results of existing one- and two-dimensional process simulators and three-dimensional modules newly developed. Within this presentation, the capabilities of the three-dimensional ion implantation module developed at FhG-IIS-B within PROMPT are being outlined.