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Three-dimensional simulation of contact hole metallization using aluminum sputter deposition at elevated temperatures

Dreidimensionale Simulation von Kontaktlochmetallisierung durch Aluminium-Sputterabscheidung bei erhöhter Temperatur
 
: Bär, E.; Lorenz, J.; Ryssel, H.

Grünbacher, H.:
ESSDERC '97. Proceedings of the 27th European Solid-State Device Research Conference
Paris: Ed. Frontieres, 1997
ISBN: 2-86332-221-4
S.476
European Solid-State Device Research Conference (ESSDERC) <27, 1997, Stuttgart>
Englisch
Konferenzbeitrag
Fraunhofer IIS B ( IISB) ()
aluminium; aluminum; contact hole metallization; Halbleitertechnologie; Kontaktlochmetallisierung; Oberflächendiffusion; process simulation; Prozeßsimulation; semiconductor technology; surface diffusion

Abstract
A three-dimensional (M) simulation program has been developed which is capable of simulating layer deposition on 3D geometries. In this paper we present the application of the tool to the simulation of aluminum sputter deposition at elevated temperatures. It is assumed that due to the higher temperature, surface diffusion of the atoms is possible. In consequence, the step coverage is better than for cold sputter deposition. To model surface diffusion, a transport coefficient K is introduced as parameter, which can be related to the diffusion length. Simulation results for different values of K are shown. It turned out that if K is far larger than the dimension of the contact hole, void free filling of the hole is achieved.

: http://publica.fraunhofer.de/dokumente/PX-36537.html