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Thin stoichiometric silicon nitride prepared by r.f. reactive sputtering

Herstellung dünner stöchiometrischer Siliciumnitridschichten mittels RF Kathodenzerstäubung
: Qian, F.; Temmel, G.; Schnupp, R.; Ryssel, H.


Microelectronics reliability 39 (1999), Nr.2, S.317-323
ISSN: 0026-2714
Workshop "Dielectrics in Microelectronics" <1998, Toulouse>
Fraunhofer IIS B ( IISB) ()
interference filter; oxygen resonance; RBS; r.f. reactive sputtering; silicon nitride

Thin silicon nitride films were prepared on silicon wafers at deposition rates of 4nm/min by r.f. reactive sputtering. Various mechanical, chemical and optical properties were investigated as a function of r.f. power, gas composition and temperature by means of AFM, RBS, XPS and an ellipsometer. Chemical stoichiometric films, with N-to-Si atomic ratio of 4:3 and refractive index of 2.0 were achieved even at room temperature. An interference filter for a UV detector with central wavelength of 254nm was manufactured based on sputtered nitride, aluminum and silicon dioxide.