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Temperature-dependent cyclotron resonances in n-type GaAs

Temperaturabhängige Zyklotronresonanzen in n-Typ GaAs


Physical Review. B 48 (1993), Nr.12, S.8761-8770
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
Fraunhofer IAF ()
cyclotron measurement; doped GaAs; dotiertes GaAs; III-V Halbleiter; III-V semiconductors; Zyklotronmessung

We report temperature-dependent cyclotron resonances of electrons in bulk GaAs in a temperature regime from about 10-300 K. Due to the nonparabolicity of the GaAs conduction band at sufficiently high temperatures and magnetic-field strengths, several individual Landau transitions are observed. A single line of strongly overlapping Landau transitions is found at higher temperatures and also in the case of small magnetic- field strength. Band coupling, electron-phonon interaction, and the electron spin influence the cyclotron resonance. However, from liquid-helium temperatures up to room temperature, the transition energies are essentially independent of temperature. Scattering times, which govern the broadening of the Landau transitions, decrease in magnitude with increasing magnetic-field strength as well as with temperature, and there is no simple relation to magnetotransport scattering times.