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Temperature dependence of persistent photo-conductivity due to DX centers in AlxGa1-xAs-Si.

Temperaturabhängigkeit der persistenten Photoleitung aufgrund von DX-Zentren im AlxGa1-xAs-Si
: Brunthaler, A.; Köhler, K.

Applied physics. A 50 (1990), S.515-517 : Abb.,Lit.
ISSN: 0340-3793
ISSN: 0721-7250
ISSN: 0947-8396
Fraunhofer IAF ()
DX center; DX-Zentrum; III-V Halbleiter; III-V semiconductors; persistent photoconductivity; persistente Photoleitung

Conductivity and Hall effect measurements were performed on molecular beam epitaxy grown Al sub x Ga sub 1-x As:Si samples, which show a large persistent photoconductivity effect. We observe one, two, and three minima in the temperature-dependent carrier concentration during the heating process after having first illuminated the samples (x=0.25, 0.30, and 0.37, respectively) at low temperature. We interpret this structure in terms of the existence of different types of large lattice relaxation DX centers.