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Alpha-factor improvements in high-speed p-doped In0.35Ga0.65As/GaAs MQW lasers.

Verbesserung des Alpha-Faktors in p-dotierten In0.35Ga0.65As/GaAs-MQW-Hochgeschwindigkeitslasern
 

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Electronics Letters 29 (1993), Nr.19, S.1685-1686
ISSN: 0013-5194
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
alpha-factor; Alpha-Faktor; Halbleiterlaser; high-speed; hohe Geschwindigkeit; p-doping; p-Dotierung; semiconductor laser; strained layer; verspannte Schicht

Abstract
The authors investigate experimentally for the first time the improvements in the linewidth enhancement factor, Alpha, resulting from simultaneous addition of strain and p-doping in high-speed GaAs-based multiquantum well lasers. The Alpha factor is determined from measured changes in both gain and refractive index as a function of CW bias current, yielding Alpha 3.1 and 1.4 at the threshold lasing wavelength for unstrained GaAs/Al0.25Ga0.75As and p-doped strained In0.35Ga0.65As/GaAs devices, respecitvely.

: http://publica.fraunhofer.de/dokumente/PX-3611.html