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1992
Conference Paper
Titel
TDLS analysis of water vapour traces in semiconductor process gas
Alternative
TDLS-Analyse von Wasserdampfspuren in Halbleiter-Prozeßgasen
Abstract
The analysis of ultrapure semiconductor process gases by infrared diode laser spectroscopy is reported. For worst case demonstration, the system water vapour in ammonia was chosen, which can not be handled at water vapour trace levels by conventional techniques. A detection limit of 300 ppb was obtained with considerably lower values possible for optimized systems. The ammonia cross sensitivity was found to be below the water vapour detection limit. The technique is potentially applicable to a large number of trace and carrier gase species under difficult conditions.
Author(s)