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AlGaInP/GaInAs/GaAs-MODFETs with carbon doped p+ -GaAs gate structure, a novel device concept, its implementation and device properties

AlGaInP/GaInAs/GaAs-MODFETs mit kohlenstoffdotiertem p+ -GaAs-Gate, ein neues Bauelementekonzept, seine Implementierung und Eigenschaften des Bauelementes

Rupprecht, H.S.; Weimann, G.:
Gallium arsenide and related compounds 1993. Proceedings
Bristol: IOP Publishing, 1994 (Institute of Physics - Conference Series 136)
ISBN: 0-7503-0295-X
S.35-40 : Abb.,Lit.
International Symposium on Gallium Arsenide and Related Compounds <20, 1993, Freiburg/Brsg.>
Fraunhofer IAF ()
carbon doping; chemical vapour deposition; Kohlenstoffdotierung; MOCVD; MODFET; selbstjustierter Herstellungsprozeß; self-aligned process

We report a fabrication scheme of a new AlGaInP/GaInAs/GaAs-MODFET device. The structure incorporates two novel features: An AlGaInP barrier which provides a larger conduction band offset than the commonly used AlGaAs and a highly carbon-doped p-type GaAs gate structure which supports a very simple fabrication scheme. Using 1 mym optical lithography we have fabricated first demonstrator devices with Ft and Fmax of 60 and 140 GHz, respectively.