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1995
Conference Paper
Titel
Studies of heteroepitaxial nucleation and growth of diamond on silicon
Abstract
The decisive role of ion bombardment, due to the substrate bias for epitaxial diamond nucleation by microwave plasma chemical vapor deposition (MWCVD), was demonstrated by growth experiments using patterned Si substrates. Interface between the silicon substrate and epitaxially grown diamond crystals was studied by cross-sectional high resolution electron microscopy (XREM), showing a periodic 3-to-2 registry of {111} atom planes on the epitaxial diamond-silicon interface and interface dislocations. A cubic silicon carbide "transition" was found to be unnecessary for the epitaxy. The possibility of depositing diamond on silicon (221) surfaces was demonstrated.
Language
English