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Structure and electrical characteristics of a thin buried oxide containing silicon inclusions

: Meda, L.; Bertoni, S.; Cerofolini, G.; Spaggiari, C.; Gassel, H.

Electrochemical Society -ECS-:
Sixth International Symposium on Silicon-on-insulator technology and devices '94. Proceedings
Pennington/N.J., 1994 (Electrochemical Society. Proceedings 94-11)
ISBN: 1-56677-043-2
International Symposium on Silicon-on-Insulator Technology and Devices <6, 1993, San Francisco/Calif.>
Fraunhofer IMS ()
Siliciumdioxid; Siliciumoxid; silicon dioxide; silicon-on-insulator; silicon oxide; SIMOX; SOI-Technik

This paper deals with the characterization of a thin (100 nm) buried oxide in an SOI structure. Although in principle thin oxide layers without any silicon inclusion could be formed, the buried oxides (BOXes) commonly produced in a single-step implantation (NV-200 implanter) always contain silicon inclusions. These inclusions have a strong influence on the electrical properties of the insulator, at least in reducing its effective thickness. As a consequence, lower breakdown voltages are caused and relatively high tunneling currents flow through the oxide layer. Moreover, relevant pinhole densities are found. A way to study these effects is through the preparation of scaled-area capacitors and the analysis of their current-voltage (I - V) characteristics. This analysis is carried out by plotting the values of maximum tunneling currents, measured just before the breakdown threshold, vs. the related breakdown voltages, keeping the capacitor area as a parameter.