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Strong asymmetry of non-resonant optical four-wave mixing in PbSe and PbSnSe

Starke Asymmetrie in der nichtresonanten optischen Vier-Wellen-Mischung in PbSe und PbSnSe
: Dorbath, K.; Häfele, H.G.; Tacke, M.


Semiconductor Science and Technology 5 (1990), S.342-345
ISSN: 0268-1242
ISSN: 1361-6641
Fraunhofer IPM ()
Coherent Anti-Stokes Raman Scattering; flache Störstelle; four wave mixing; Halbleiter; Kohärent Anti-Stokes-Ramanstreuung; semiconductor; Shallow Impurity; Vier-Wellen-Mischung

Non-resonant four-wave mixing experiments were performed for a determination of the free carrier intraband energy relaxation time in semiconductors. The signal intensity was measured as a function of the pump beam detuning delta omega. For PbSe and PbSnSe this line shape showed an unexpected strong asymmetry; that is, the Stokes signal dpendence on delta omega was different from that of the anti-Stokes signal. We explain this asymmetry by an interference with resonant scattering due to a shallow impurity with binding energy of the order of a few wavenumbers.