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Stress biasing of thin film membranes

 
: Moldovan, N.; Csepregi, L.; Suski, J.; Lang, W.

CAS '92. 15th Annual Semiconductor Conference
1992
Semiconductor Conference <15, Sinaia>
Englisch
Konferenzbeitrag
Fraunhofer IFT; 2000 dem IZM eingegliedert
ion implantation; stress compensation; thin membrane

Abstract
Ion implantation provides a practical way to compensate mechanical stress in silicon dioxide and nitride layers. Changes are due to reversible structural modifications in the bulk of the layers. Through controlling the mechanical stress in thin films by means of ion implantation and annealing, one can obtain good quality, large area membranes. The technique can also be used for healing cracks in masling nitride layers.

: http://publica.fraunhofer.de/dokumente/PX-35043.html