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1994
Conference Paper
Titel
Strain relaxation in In0.2Ga0.8As/GaAs MQW structures
Alternative
Verspannungsrelaxation in In0.2Ga0.8As/GaAs MQW-Strukturen
Abstract
We study the limits of pseudomorphic strain in MBE grown In0.2Ga0.8As/GaAs multiple quantum well structures and the influence of lattice relaxation on the optoelectronic properties of high-speed p-i-n photodetectors with MQWs in the intrinsic region. High-resolution X-ray diffraction yields the degree of lattice relaxation. For the detectors these results are in agreement with photocurrent spectroscopy measurements and subband calculations. The detectors yield a quantum efficiency of unity, in spite of the onset of lattice relaxation.
Author(s)