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Strain relaxation in In0.2Ga0.8As/GaAs MQW structures

Verspannungsrelaxation in In0.2Ga0.8As/GaAs MQW-Strukturen
 

Rupprecht, H.S.; Weimann, G.:
Gallium arsenide and related compounds 1993. Proceedings
Bristol: IOP Publishing, 1994 (Institute of Physics - Conference Series 136)
ISBN: 0-7503-0295-X
S.385-390
International Symposium on Gallium Arsenide and Related Compounds <20, 1993, Freiburg/Brsg.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
InGaAs/GaAs MQW; p-i-n photodetector; p-i-n photodetector; Röntgenspektroskopie; strain relaxation; Verspannungsrelaxation; X-ray spectroscopy

Abstract
We study the limits of pseudomorphic strain in MBE grown In0.2Ga0.8As/GaAs multiple quantum well structures and the influence of lattice relaxation on the optoelectronic properties of high-speed p-i-n photodetectors with MQWs in the intrinsic region. High-resolution X-ray diffraction yields the degree of lattice relaxation. For the detectors these results are in agreement with photocurrent spectroscopy measurements and subband calculations. The detectors yield a quantum efficiency of unity, in spite of the onset of lattice relaxation.

: http://publica.fraunhofer.de/dokumente/PX-34936.html