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AIN properties of various producers

 
: Otschik, P.; Kretzschmar, C.; Lefrance, G.

Gens, W. ; TU Ilmenau:
43. Internationales Wissenschaftliches Kolloquium 1998. Band 2: Vortragsreihen Mikroelektronische Schaltungen und Systeme, Festkörperelektronik und Sensoren, innovative Werkstoffe und Oberflächentechnik
Ilmenau: TU, 1998
S.88-91
Internationales Wissenschaftliches Kolloquium <43, 1998, Ilmenau>
Englisch
Konferenzbeitrag
Fraunhofer IKTS ()
AlN; bending strength; Substrates; thermal conductivity

Abstract
AlN has many advantageous properties. These concern a high thermal conductivity, a non-toxic nature, a temperature coefficient of expansion (TCE) that closely matches the TCE`s of both silicon and gallium arsenide making AlN useful for direct mounting of large VLSI dies. A constant quality of this ceramic is decisive for a reproducible packaging. Different substrate qualities (as-fired, lapped, polished) of 5 producers were investigated. The substrates distinguish in following: I. the middle size of grains in the AlN-polycrystal (1...11 mu m); II. the substrate roughness (0,2...0,9 mu m); III. the amount of additional phases (Al2Y4O9, AlYO3, Al5Y3O12); IV. the thermal conductivity (100...200 W/mK); V. the bending strength (300...430 MPa).

: http://publica.fraunhofer.de/dokumente/PX-3454.html