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Spectroscopic ellipsometry characterization of (InGa)N on GaN

Spektroskopische Ellipsometrie zur Untersuchung von InGaN auf GaN


Applied Physics Letters 73 (1998), Nr.12, S.1715-1717 : Ill., Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
GaN-based LEDs; GaN-basierende LEDs; group III-nitrides; Gruppe III-Nitride; InGaN; spectroscopic ellipsometry; spektroskopische Ellipsometrie

Pseudodielectric function spectra of hexagonal (InGa)N epitaxial layers on GaN were obtained by spectroscopic ellipsometry and compared with photoreflection spectra. Composition and thickness of the In(x)Ga(1-x) N layers grown by metalorganic chemical vapor deposition, were varied between 0.04<=x<=0.10 and 15-60 nm, respectively. The pseudodielectric function exhibits a clear maximum at the fundamental gap energy of the (InGa)N, which allows a determination of the In content via the composition dependence of that gap energy. The pseudodielectric function spectrum of a complete GaN/(InGa)N(AlGa)N/GaN light-emitting diode structure shows maxima arising from fundamental gap interband transitions of all constituent layers including the (InGa)N active region.