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Solid-solubility limits of Be in molecular beam epitaxy grown Al(x)Ga(1-x)As layers and short-period superlattices

Löslichkeit von Be in mit der Molekularstrahl-Epitaxie gewachsenen Al(x)Ga(1-x)As-Schichten und Übergittern mit kurzer Periode
: Gaymann, A.; Maier, M.; Köhler, K.


Journal of applied physics 86 (1999), Nr.8, S.4312 ff.
ISSN: 0021-8979
ISSN: 1089-7550
Fraunhofer IAF ()
Al(x)Ga(1-x)As:Be; diffusion; Löslichkeit; molecular beam epitaxy; Molekularstrahlepitaxie; secundary inn mass spectrometry; segregation; Sekundär Innen-Massenspektrometrie; solid-solubility

The redistribution of Be in highly doped Al(x)Ga(1-x)As layers and Al(x)Ga(1-x) As/AlAs(GaAs) short period superlattices (SPSL) during molecular beam epitaxy was investigated by secondary ion mass spectrometry (SIMS) depth profiling. Be outdiffuses significantly from these layers and, additionally, segregates in growth direction. Conversely, Be is depleted and incorporated only up to a solid-solubility limit depending on the Al content. SPSLs with shorter period are disordered and show the solid-solubility limits of homogeneous Al(x)Ga(1-x)As layers with the same average composition. Be solid-solubility limits in Al(x)Ga(1-x)As layers covering the whole range from GaAs to AlAs are derived from the SIMS depth profiles.