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Smart power with 1200V DMOS

 
: Vogt, F.P.; Vogt, H.; Radecker, M.; Fiedler, H.-L.

:

9th International Symposium on Power Semiconductor Devices and ICs 1997. Proceedings
Piscataway, NJ: IEEE, 1997
ISBN: 0-7803-3993-2
ISBN: 0-7803-3994-0
ISBN: 0-7803-3995-9
S.317-320
International Symposium on Power Semiconductor Devices and IC's <9, 1997, Weimar>
Englisch
Konferenzbeitrag
Fraunhofer IMS ()
CMOS-Technik; Leistungselektronik; Leistungshalbleiterbauelement; Leistungsschalter; Leistungstransistor; SIMOX; Smart-Power; SOI

Abstract
This paper describes a Smart-Power-Process which integrates a vertical 1200V DMOS power transistor and low voltage CMOS circuits. For isolation purpose between the CMOS part and the high voltage power device the local SIMOX-process is used (separation by implanted oxygen) with a pn junction in series. For the first time a scalable vertical 1200V high power switching device has been combined with VLSI compatible CMOS to realize a resonant power supply circuit for compact fluoresant lamps. The functionallity of the introduced process has been demonstrated by a monolithic integrated five terminal device for compact fluorescent lamps.

: http://publica.fraunhofer.de/dokumente/PX-34000.html