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1990
Conference Paper
Titel
Smart CMOS pressure sensor
Abstract
The fabrication of capacitive pressure sensors using silicon integrated circuit processing is described. The pressure sensors were fabricated using planar etch processing techniques. This results in very small sensors having membrane diameters between 50 micrometers and 150 micrometers. The pressure dependence was studied up to 5 bars. Concepts for on chip signal conditioning by using the switch-capacitor method are given.