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Single-chip 4 bit 35 GHz phase-shifting receiver with a Gb/s digital interface circuitry

Single-Chip Empfänger mit einem 4 Bit 35 GHz Phasenschieber und einer Gb/s digitalen Interface-Schaltung


IEEE Electron Devices Society; IEEE Microwave Theory and Techniques Society:
17th GaAs IC Symposium 1995. Technical Digest
New York, NY: IEEE, 1995
ISBN: 0-7803-2966-X
ISBN: 0-7803-2967-8
ISBN: 0-7803-2968-6
GaAs IC Symposium <17, 1995, San Diego/Calif.>
Fraunhofer IAF ()
GaAs HEMT; phase shifter; Phasenschieber

Using 0.3 micrometer gate length GaAs/AlGaAs HEMTs, we have designed and realized a single-chip receiver including one 4 bit 360 deg. phase shifter, two low-noise 35 GHz amplifiers, and one low-power Gb/s digital interface circuit. Desired functions have been measured on-wafer. 16 phase-shifting curves have been obtained with a' maximum deviation of 7.5 deg.. The total gain of the millimeterwave channel is similar 7 dB with a phase-dependent deviation of <1.3 dB. The input and the output matching are better than minus 12 dB. The chip area is 4x2.5 sqmm . The dc power consumption is less than 250 mW.