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Simulation of time depending particle transport during dry etch processes

: Börnig, K.; Pelka, J.


Microelectronic engineering 21 (1993), Nr.1-4, S.325-328
ISSN: 0167-9317
International Conference on Microcircuit Engineering (ME) <18, 1992, Erlangen>
Fraunhofer ISIT ()
Monte Carlo methods; particle backscattering; sputter etching

Energy and angular distributions of ions at the substrate electrode are computed with a Monte Carlo-simulation, accounting for charge transfer collisions and elastic scattering via differential cross sections. The time dependent electric field the ions react on is calculated with an extended hydrodynamical theory, that is valid for the whole pressure range including those relevant for RIE processing. The influence of the scattering processes on etch profiles is estimated from the calculated distributions.