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Simulation of the lateral spread of implanted ions - theory

 
: Barthel, A.; Krüger, W.; Lorenz, J.

Associated Short Course and Software Forum, Boole:
Lecture Notes and Digest of the NASECODE VI
Boole, 1989
ISBN: 0-906783-86-0
S.513-520
NASECODE <6, 1989, Dublin>
Englisch
Konferenzbeitrag
Fraunhofer IIS B ( IISB) ()
analytical description; analytische Beschreibung; depth dependence; ion implantation; Ionenimplantation; lateral spread; laterale Streuung; process simulation; Prozeßsimulation; Tiefenabhängigkeit

Abstract
As device dimensions have shrinked to below 1 My m, the description of the lateral spread of ions implanted into silicon becomes very important in order to yield realistic values for channel lengths of MOS devices. In this paper, a new analytical model which is a first step towards the description of the depth-dependence of the lateral spread is introduced. Furthermore, a Boltzmann Transport program capable of calculating the range parameters are given. At last, comparisons with Monte-Carlo simulations are made.

: http://publica.fraunhofer.de/dokumente/PX-33721.html