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Simulation of the lateral spread of implanted ions - experiments

Simulation der lateralen Verteilung von implantierten Ionen - Experimente
 
: Gong, L.; Barthel, A.; Lorenz, J.; Ryssel, H.

Heuberger, A.; Ryssel, H.; Lange, P.:
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings
Berlin/West: Springer, 1989
ISBN: 3-540-51000-1
S.198-201
European Solid State Device Research Conference <19, 1989, Berlin>
Englisch
Konferenzbeitrag
Fraunhofer IIS B ( IISB) ()
2d-Darstellung; 2d-delination; ion implantation; Ionenimplantation

Abstract
For the measurement of dopant concentrations in two dimensions (2d), a delineation technique has been optimized. The method yields up to three dopant equiconcentration lines in one sample. The concentration of these lines can be changed by modification of the etching conditions. This technique is applied to the investigation of 2d ion implantation profiles.

: http://publica.fraunhofer.de/dokumente/PX-33720.html