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1989
Conference Paper
Titel
Simulation of the lateral spread of implanted ions - experiments
Alternative
Simulation der lateralen Verteilung von implantierten Ionen - Experimente
Abstract
For the measurement of dopant concentrations in two dimensions (2d), a delineation technique has been optimized. The method yields up to three dopant equiconcentration lines in one sample. The concentration of these lines can be changed by modification of the etching conditions. This technique is applied to the investigation of 2d ion implantation profiles.
Language
English