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Simulation of ion implantation into multilayer structures

Simulation der Ionenimplantation in Mehrschichtstrukturen
: Wierzbicki, R.J.; Barthel, A.; Lorenz, J.

Heuberger, A.; Ryssel, H.; Lange, P.:
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings
Berlin/West: Springer, 1989
ISBN: 3-540-51000-1
European Solid State Device Research Conference <19, 1989, Berlin>
Fraunhofer IIS B ( IISB) ()
ion implantation; Ionenimplantation; Mehrschichtmodell; multilayer model; range straggling; Reichweitestreuung; SIMS-measurement; SIMS-Messung; simulation

For the analytical description of doping profiles after Ion Implantation, good multilayer models are required to describe the implantation through thin layers, e. g. a scattering oxide or non-vertical mask edges. In this paper, benefits and drawbacks of some published models are discussed, and an improvement is suggested. Comparisons with results from Monte Carlo simulations and SIMS measurements are shown.