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Simulation of buried layer experiments containing all four dopant species

Simulation von Experimenten mit vergrabenen Schichten, die alle vier Dopanden enthalten
: Ghaderi, K.; Hobler, G.; Budil, M.; Pötzl, H.; Pichler, P.; Ryssel, H.; Hansch, W.; Eisele, I.; Tian, C.; Stingeder, G.

Huff, H.R. ; Electrochemical Society -ECS-:
Semiconductor Silicon 1994 : Proceedings of the Sixth International Symposium on Silicon Materials Science and Technolgy
Pennington/N.J., 1994 (Electrochemical Society. Proceedings 94-10)
ISBN: 1-56677-042-4
International Symposium on Silicon Materials Science and Technology <6, 1994, San Francisco/Calif.>
Fraunhofer IIS B ( IISB) ()
Antimon; Arsen; Bor; Diffusionsmechanismus; Phosphor; silicium

In this work, we describe a general model for dopant diffusion via dopant-defect pairs assuming local equilibrium for electronic processes, but not for the pairing processes. A series of experiments containing four dopant species in the buried layer and phosphorus in the top layer has been carried out and simulated in order to obtain a parameter set for the pair diffusion model. From the diffusion of the buried dopants, the fractional interstitials component f sub1 of B, As and Sb has been determined as f subIB = 0.67, f subIAs = 0.27-0.3, f sub ISb = 0.01, assuming f subIP = 1, in good agreement with previously known values. With the same set of parameters, OED has been successfully simulated. However, phosphorus diffusion experiments published in the literature could only be simulated with a different parameter set as compared with that obtained by the simulation of our experiments. The self-diffusion coefficients D subI C eq/I and D subV C eq/V are in both sets in the order of those proposed by Tan and Gösele.