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SiC formation by high-temperature carbon implantation into SiO2, the role of Si/SiO2 interface
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1997
Journal Article
Titel
SiC formation by high-temperature carbon implantation into SiO2, the role of Si/SiO2 interface
Author(s)
Frey, L.
Stoemenos, J.
Schork, R.
Nejim, A.
Hemment, P.L.
Zeitschrift
Journal of the Electrochemical Society
DOI
10.1149/1.1838184
Language
English
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