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An advanced CAD model for the thin-film SOI MOSFET

: Abel, H.B.; Berger, M.; Zimmer, G.


Institute of Electrical and Electronics Engineers -IEEE-:
International SOI Conference '92. Proceedings
New York/N.Y.; Piscataway/N.J., 1992
ISBN: 0-7803-0776-3
International SOI Conference <1992, Ponte Vedra Beach/Fla.>
Fraunhofer IMS ()
MOS-Transistor; Schaltungssimulation; SOI-Technologie

The charge sheet approach, which allows the modeling of the electronic behaviour of the MOS transistor in all regions of inversion has been adapted to the SOI MOSFET. Particular interest has been paid into an efficient description of the surface potentials in the transistor. As a result, a complete CAD model of the SOI MOSFET which has been implemented into the SPICE 3 circuit simulation program, is proposed.