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Sensor und Verfahren zu dessen Herstellung

Sensor and process for its manufacture
 
: Lang, W.; Folkmer, B.

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Frontpage ()

DE 1993-4303423 A: 19930205
DE 1993-4303423 A: 19930205
DE 4303423 C2: 19960718
H01L0029
Deutsch
Patent, Elektronische Publikation
Fraunhofer IZM ()

Abstract
A sensor comprises a semiconductor substrate which is covered by a diaphragm which is provided with a sensor structure which has a semiconductor area. According to the invention, at least the semiconductor area of the sensor structure is arranged on the side of the diaphragm facing a recess in the semiconductor substrate. The semiconductor area can be formed as a monocrystalline semiconductor in this way

: http://publica.fraunhofer.de/dokumente/PX-33167.html