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Safety aspects of ion implantation.

Sicherheitsaspekte bei der Ionenimplantation
: Ryssel, H.

Semiconductor Equipment and Materials International -SEMI-, San Jose/Calif.:
SEMICON Europa '88 Technical Conference. Advanced Process Control
Montain View, 1988
S.204 ff
Europa Technical Conference <1988, Zürich>
Fraunhofer IIS B ( IISB) ()
Halbleiterfertigungsgerät; Halbleitertechnologie; Ionenimplantation; Sicherheit

Ion implantation has become the most important doping technique for semiconductor devices in recent years. Ion implanters have changed from complicated experimental equipment to computer-controlled, automated machines. Nonetheless, implanters are still dangerous unless they are designed and operated properly. The main hazards result from high voltages, x-rays, and from toxic chemicals necessary to produce the desired ions. In this paper, the hazards typical for implanters will be discussed. (AIS-B)