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Room-temperature, high-deposition-rate, plasma-enhanced chemical vapour deposition of silicon oxynitride thin films producing low surface damage on lattice-matched and pseudomorphic III-V quantum-well structures



Thin solid films 259 (1995), S.225-230
ISSN: 0040-6090
Fraunhofer IAF ()
chemical vapour deposition; chemische Dampfabscheidung; silicon nitride; silicon oxide; Silizium-Nitrid; Silizium-Oxyd

Silicon oxynitride thin films have been deposited at room temperature on GaAs using the PECVD technique with SiH4, N2O and Ar in a modified magnetron sputtering system. Typical deposition rates were on the order of 350 nm min high-1 , substantially higher than has been previously achieved for room-temperature deposition with good optical and mechanical quality. At a fixed ratio of precursor gases SiH4:N2O:Ar = 14:33:160 sccm, bias potential V subB = -50 V, and total deposition pressure P = 32 MTorr, the atomic ratios of Si/O and N/O were found to be 1.25 and 0.14, respectively, using Rutherford backscattering spectroscopy. From nuclear reaction analysis, the hydrogen content was found to be 6 at.%, much lower than is typical for low-temperature PECVD films. The deviation in the uniformity of the film thickness was within plus/minus 4% across a 2" GaAs wafer. For the above deposition conditions, the refractive index and the optical band-gap of the films were 1.9 and 2.0 eV, respectively . Raman and photoluminescence spectra show practically no surface damage following film deposition on GaAs/AlGaAs modulation-doped field-effect transistor, unstrained GaAs/AlGaAs quantum-well (QW) structures and pseudomorphic InGaAs/GaAs QW structures.