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Resonant-tunneling transfer times between asymmetric GaAs/Al(0.35)Ga(0.65)As double quantum wells

Transfer-Zeiten beim resonanten Tunneln zwischen asymmetrischen GaAs/Al(0.35)Ga(0.65)As Doppel-Quantum-Wells
 
: Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Köhler, K.

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Physical Review. B 41 (1990), Nr.17, S.12295-12298 : Abb.,Lit.
ISSN: 0163-1829
ISSN: 1098-0121
ISSN: 0556-2805
Englisch
Zeitschriftenaufsatz
Fraunhofer IAF ()
coupled quantum wells; gekoppelte Quantum Wells; III-V Halbleiter; III-V semiconductors; quantum wells; time resolved photoluminescence; tunneling; tunneln; zeitaufgelöste Photolumineszenz

Abstract
Electron tunneling through the barrier in asymmetric double-quantum-well structures is investigated by time-resolved picosecond luminescence spectroscopy. Change from nonresonant to resonant tunneling is achieved with a perpendicular electric field. Energetic alignment of electron subbands in the two wells strongly enhances tunneling transfer rates. The resonant transfer times decrease strongly with barrier thickness. The wells are coupled at resonance by energy-conserving scattering processes between states localized in a single well. The buildup of delocalized coherent states at resonance would lead to much shorter transfer times.

: http://publica.fraunhofer.de/dokumente/PX-31845.html