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Resonant Raman scattering in GaN/Al(0.15)Ga(0.85)N and In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) heterostructures

Resonante Ramanstreung an GaN/Al(0.15)Ga(0.85)N und In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) Heterostrukturen

Abernathy, C.R.:
Gallium nitride and related materials II
Pittsburgh, Pa.: MRS, 1997 (Materials Research Society symposia proceedings 468)
ISBN: 1-558-99372-X
Symposium Gallium Nitride and Related Materials <2, 1997, San Francisco/Calif.>
Fraunhofer IAF ()
GaN; InGaN; Phononfrequency; Phononfrequenz; raman scattering; Ramanstreuung

We report on resonant Raman scattering in Al(0.15)Ga(0.85)N/GaN single quantum wells (QWs) and Al(x)Ga(1-x)N/GaN/In(y)Ga(1-y)N heterostructures. By choosing appropriate excitation conditions we could probe selectively the GaN quantum well or the Al(0.15)Ga(0.85)N barrier of Al(0.15)Ga(0.85)N/GaN single quantum wells. For the In(x)Ga(1-x)N material system a linear frequency shift of the E2- and A1(L0) phonon mode to lower frequencies was found with increasing In content. The shift was determined to -0.79 cm(exp-1) per per cent in content for the A1(L0) phonon frequency. Resonant excitation of Al(x)Ga(1-x)N/GaN/In(y)Ga(1-y)N heterostructures enabled us to detect phonon signals from the In(x)Ga(1-x)N layer in the heterostructure and to determine its In content.