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Resonant Raman scattering and photoluminescence at the E0 band gap of carbon-doped AlAs.

Resonante Ramanstreuung und Photolumineszenz an der E0-Bandlücke von kohlenstoff-dotiertem AlAs
: Fischer, A.; Ploog, K.; Wagner, J.


Applied Physics Letters 62 (1993), Nr.26, S.3482-3484 : Abb.,Lit.
ISSN: 0003-6951
ISSN: 1077-3118
Fraunhofer IAF ()
AlAs; carbon doping; Kohlenstoffdotierung; photoluminescence; Photolumineszenz; raman scattering; Ramanstreuung

Carbon-doped AlAs grown by solid source molecular beam epitaxy has been studied by Raman and photoluminescence spectroscopy. Doping levels exceeding 2x10high19cmhighminus3 have been obtained using a heated graphite filament as the carbon source. For excitation just above the AlAs Esub0 band-gap energy radiative recombination is observed across that band gap, which involves nonthermalized photogenerated electrons occupying the gamma-conduction-band minimum rather than the lowest indirect X minima. Raman spectra excited in resonance with the Esub0 band gap show a hole-plasmon-longitudinal-optical-phonon coupling similar to that found in p-type GaAs. Resonantly excited Raman spectra further reveal a vibrational mode at about 635 cmhighminus1, which is assigned to the local vibrational mode of the CsubAs acceptor in AlAs.