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Resonant polaron coupling of high index electron Landau levels in GaAs heterostructures

Resonante Polaron Kopplung von elektrischen Landau Niveaus mit hohem Index in GaAs Heterostrukturen
: Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.


Physical review letters 76 (1996), Nr.11, S.1904-1907
ISSN: 0031-9007
Fraunhofer IAF ()
III-V Halbleiter; III-V semiconductors; Magnetfeld; magnetic field; two dimensional electron gas; zwei-dimensionales Elektronengas

The resonant polaron coupling of high index Landau levels was investigated for quasi-two-dimensional electron inversion layers in GaAs. Strong polaron mass enhancements were observed in magnetic field regimes where the Landau levels N = 2 and 3 cross with the level N = 0 plus one bulk longitudinal optical phonon. The polaron masses were excellently described with a Fröhlich coupling constant alpha = 0.06 to 0.07 taking into account band coupling phenomena, a finite extent of the inversion layer in growth direction, and coupling of the electrical dipole transitions between the Landau levels due to electron-electron interactions.